Design and Reliability Analysis of Sb₂S₃ Absorber Layer for Photovoltaic Applications

Earth-abundant and less toxic Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> has drawn significant attention in the photovoltaic research. In this work, Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> absorber material is designed and optimized for photovoltaic application. Since, the material is prone to defects and traps, reliability analysis of the absorber layer is conducted in order to ensure its stable performance. The quantum efficiency of the Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> absorber layer-based PV cell is obtained which aids in understanding of the sensitivity of the examined device with respect to solar radiation. A detailed analysis is executed in three major aspects: first- optimization of the absorber, electron and hole extraction layers, second- recombination rate, electric field, I-V characteristics analysis, third- reliability analysis of defect densities.