Investigating the Robustness of Dynamically Tunable Logic Gates with Tantalum Oxide Memristors
We present a two-cell Tantalum oxide-based Memristor Cellular Neural Network (M-CellNN) capable of performing multiple logic operations (AND, OR, XOR) by changing only the initial states of its memristors. This flexible design leverages the dynamic state-change properties of memristors to adjust logic functions. Our results show that this approach significantly broadens the range of achievable logic tasks within a compact architecture, underscoring the potential of memristive elements for versatile and robust circuit designs. Additionally, we examine the impact of non-idealities in coupling weights and initial conditions on the outputs of the network.
Authors
- András Horváth (ORCID: https://orcid.org/0000-0001-5855-4186)
- Ronald Tetzlaff (ORCID: https://orcid.org/0000-0001-7436-0103)
- Alon Ascoli (ORCID: https://orcid.org/0000-0003-4026-9648)
Institutions
- Politecnico di Torino (IT)
- Pázmány Péter Catholic University (HU)
- Technische Universität Dresden (DE)
Publication Details
- Published
- 2025-05-25
- DOI
- https://doi.org/10.1109/iscas56072.2025.11043950
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00