350-fJ/spike, 30-Hz Bio-inspired Silicon Neuron Circuit in 0.2 V, 65 nm CMOS

Biologically inspired silicon neuron circuits must accurately mimic real neurons while being compact and low-power. Among all silicon neuron models, integrate-and-fire (I&F) models closely replicate the behaviour of real neurons while maintaining simplicity and computational efficiency. However, existing CMOS-based implementations of I&F neuron models lack optimal circuit performance and energy efficiency, primarily due to leakage and short-circuit currents associated with these designs. This paper presents an energy-efficient I&F silicon neuron (SiN) circuit that can produce biologically plausible neural dynamics by utilising the PMOS bulk cross-coupled inverter pair (PBXCIP) along with a low supply voltage to reduce leakage currents effectively. Moreover, it provides firing threshold tunability with improved control. The proposed SiN is implemented using 65 nm CMOS technology, operating at a supply voltage of 0.2 V, and consumes 350 fJ/spike at a spiking frequency of 30 Hz.

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Published
2025-05-25
DOI
https://doi.org/10.1109/iscas56072.2025.11044011
Primary Topic
Advanced Memory and Neural Computing
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article
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article

350-fJ/spike, 30-Hz Bio-inspired Silicon Neuron Circuit in 0.2 V, 65 nm CMOS

Vijay Shankar Pasupureddi, Srikanth Vuppunuthala, Sivaiah Naali
Advanced Memory and Neural Computing
article

350-fJ/spike, 30-Hz Bio-inspired Silicon Neuron Circuit in 0.2 V, 65 nm CMOS

Vijay Shankar Pasupureddi, Srikanth Vuppunuthala, Sivaiah Naali
article en

Abstract

Biologically inspired silicon neuron circuits must accurately mimic real neurons while being compact and low-power. Among all silicon neuron models, integrate-and-fire (I&F) models closely replicate the behaviour of real neurons while maintaining simplicity and computational efficiency. However, existing CMOS-based implementations of I&F neuron models lack optimal circuit performance and energy efficiency, primarily due to leakage and short-circuit currents associated with these designs. This paper presents an energy-efficient I&F silicon neuron (SiN) circuit that can produce biologically plausible neural dynamics by utilising the PMOS bulk cross-coupled inverter pair (PBXCIP) along with a low supply voltage to reduce leakage currents effectively. Moreover, it provides firing threshold tunability with improved control. The proposed SiN is implemented using 65 nm CMOS technology, operating at a supply voltage of 0.2 V, and consumes 350 fJ/spike at a spiking frequency of 30 Hz.

Indian Institute of Technology Bhubaneswar (IN)
Affordable and clean energy
Openalex Percentile: Top 87%
Advanced Memory and Neural Computing
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350-fJ/spike, 30-Hz Bio-inspired Silicon Neuron Circuit in 0.2 V, 65 nm CMOS — Vijay Shankar Pasupureddi, Srikanth Vuppunuthala, et al. · (2025) | TGRS Research Map | TGRS