Study the effect of passivation layer on CZTS based solar cell : A simulation based study
Copper Zinc tin Sulfide (CZTS) is a promising thin-film solar cell material due to its earth-abundant, non-toxicity and low cost having the suitable bandgap energy between 1.4 and 1.5 eV and large absorption coefficient, over 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup>. Due to the junction recombination in the CZTS based solar cell decrease its efficiency. To overcome this challenge, introduction of a passivation layer in between the two layers is recommended. So, TiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>, and Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> materials are used as a passivation layer in the present work. To know the best passivation layer among these, firstly designed the Au/CZTS/(TiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>)/CdS/ZnO/ITO structure in SCAPS-1D and varied the thickness of absorber layer, defect density, radiative recombination with each passivation layers and study its effects on open-circuit voltage(Voc), short-circuit current(Jsc), Fill Factor and power conversion efficiency(PCE).
Authors
- Vishvas Kumar (ORCID: https://orcid.org/0000-0003-0941-6611)
- Kumar Abhishek (ORCID: https://orcid.org/0000-0001-6825-2392)
- Krishna S. Kumar
- Roshan Dhruw
Institutions
- SRM Institute of Science and Technology (IN)
Publication Details
- Published
- 2025-04-23
- DOI
- https://doi.org/10.1109/raeeucci63961.2025.11048296
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00