Electrical Performance Analysis of Organic Thin Film Transistor in Enhancement and Depletion Mode

Organic Thin Film Transistors (OTFTs) operate in enhancement mode (normally OFF) or depletion mode (normally ON) based on gate polarity, making them suitable for digital and analog applications. This study utilizes the Silvaco Atlas 2D-TCAD simulator to analyze the transfer (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf>-V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</inf>) and drain (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf>-V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf>) characteristics of OTFTs. Pentacene is selected for its high mobility and stability, while HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> serves as the dielectric for improved gate control. Key parameters, including threshold voltage (Von/Voff), mobility, subthreshold swing, on/off ratio, and contact resistance, are systematically evaluated to optimize OTFT performance for reliable use in flexible, low-power electronics.