Design and optimization of an efficient c-Si solar cell with FeSi₂ intermediate layer

This study concentrates on the development and optimization of a c-Si solar cell using FeSi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> intermediate passivation layer. The work investigates how to effectively integrate a FeSi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer into the p-i-n structure of the solar cell Using the AFORS-HET v2.5 1D simulation tool. A detailed analysis of absorber layer thickness variations and their effect on cell performance was conducted, focusing on optimizing both FeSi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and n-Si layer. To achieve more than 21% device efficiency the material depth of p-i-n based silicon solar cells are optimized in this work. Before building a physical prototype, we may use optimized solar cell design and evaluate the solar cell’s performance in a simulated environment. This can help us save time and money.