Modified DDCCTA based Memristor Emulator circuit for Incremental and Decremental mode

This paper introduces a novel memristor emulator (MRE) designed using a modified Differential Difference Current Conveyor Transconductance Amplifier (DDCCTA). The proposed architecture efficiently supports floating and grounded configurations without requiring additional sub-circuit elements, enabling seamless compatibility with Complementary Metal-Oxide-Semiconductor (CMOS) technology. The MRE effectively replicates frequency-dependent pinched hysteresis loops (PHLs) at 40 MHz while exhibiting non-linear resistance characteristics, preserving the essential properties of a memristor. Furthermore, pulse-based simulations confirm its non-volatility by maintaining stable memductance values during non-pulse intervals. Implemented using the TSMC 0.18µm process parameters, the emulator demonstrates excellent power efficiency, consuming just 6.6 mW. This design offers a promising solution to challenges related to power consumption, high-frequency operation, and integration, making it highly suitable for energy-efficient signal processing and neuromorphic applications.

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Publication Details

Published
2025-04-23
DOI
https://doi.org/10.1109/raeeucci63961.2025.11048275
Primary Topic
Advanced Memory and Neural Computing
Type
article
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article

Modified DDCCTA based Memristor Emulator circuit for Incremental and Decremental mode

Kamlesh Kumari, Himanshu Kumar, Neha Kumari, Amarjeet Singh et al.
Advanced Memory and Neural Computing
article

Modified DDCCTA based Memristor Emulator circuit for Incremental and Decremental mode

Kamlesh Kumari, Himanshu Kumar, Neha Kumari, Amarjeet Singh, Somenath Dutta, Lajwanti Mahato
article en

Abstract

This paper introduces a novel memristor emulator (MRE) designed using a modified Differential Difference Current Conveyor Transconductance Amplifier (DDCCTA). The proposed architecture efficiently supports floating and grounded configurations without requiring additional sub-circuit elements, enabling seamless compatibility with Complementary Metal-Oxide-Semiconductor (CMOS) technology. The MRE effectively replicates frequency-dependent pinched hysteresis loops (PHLs) at 40 MHz while exhibiting non-linear resistance characteristics, preserving the essential properties of a memristor. Furthermore, pulse-based simulations confirm its non-volatility by maintaining stable memductance values during non-pulse intervals. Implemented using the TSMC 0.18µm process parameters, the emulator demonstrates excellent power efficiency, consuming just 6.6 mW. This design offers a promising solution to challenges related to power consumption, high-frequency operation, and integration, making it highly suitable for energy-efficient signal processing and neuromorphic applications.

ICFAI University, Tripura (IN)
Affordable and clean energy
Openalex Percentile: Top 87%
Advanced Memory and Neural Computing
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Modified DDCCTA based Memristor Emulator circuit for Incremental and Decremental mode — Kamlesh Kumari, Himanshu Kumar, et al. · (2025) | TGRS Research Map | TGRS