A Robust DC-DC Converter with Negative Voltage Bootstrapping Using Low-Temperature Poly-Si Oxide TFTs for Fully Flexible Circuits
This paper presents a highly robust -4V DC-DC converter composed of low-temperature poly-Si oxide (LTPO) TFTs. The proposed circuit significantly reduces the off-state overdrive voltage using the negative voltage bootstrapping technique, thus enhancing the circuit robustness in against V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> shifts for flexible applications. A dual-gate feedback is adopted in the loop control system for a reliable and constant output performance. The post-layout simulation results demonstrate that the steady-state voltage deviation remains below 1%, whereas the conventional design suffers from a voltage degradation of 17.1% for a V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> shift of ±3 V. Furthermore, the compact DC-DC converter achieves maximum power efficiency of 93.7% @20 μA, and 84.1% @100 μA.
Authors
- Shengdong Zhang (ORCID: https://orcid.org/0000-0002-1815-8661)
- Congwei Liao
- Yuxuan Zhu (ORCID: https://orcid.org/0000-0003-3624-9564)
- Lingxiao Qian
Institutions
- Peking University (CN)
Publication Details
- Published
- 2025-05-25
- DOI
- https://doi.org/10.1109/iscas56072.2025.11043794
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Research and Development