A high-PSRR and low-noise CMOS-based reference with barrel shifting and notch filtering

This work presents a fully integrated, low-noise, CMOS reference generator capable of operating at supply voltages from 0.7 V up to 1.5 V. A 3-phase barrel shifting technique is proposed to upconvert the flicker noise, achieving an integrated noise of 19.7 μV<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</inf> over a 10 kHz bandwidth under typical conditions (0.7 V, 27 °C), without needing bulky off-chip filters. The untrimmed reference voltage from post-layout simulations exhibits an average temperature drift of 30 ppm/°C across the full temperature range of -40 °C to 125 °C. A 2-stage switched-capacitor notch filter that is proposed, brings a 60-fold reduction in the upconverted voltage ripple, and a 40 dB reduction in thermal noise at 10kHz while resulting in an exceptional Power Supply Rejection Ratio (PSRR) of -95 dB at 50 Hz. The circuit is implemented in a 22-nm FDSOI process, occupying an area of only 0.01 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> while consuming a power of 288 nW at the typical condition.

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Publication Details

Published
2025-05-25
DOI
https://doi.org/10.1109/iscas56072.2025.11043911
Primary Topic
Sensor Technology and Measurement Systems
Type
article
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article

A high-PSRR and low-noise CMOS-based reference with barrel shifting and notch filtering

Amrith Sukumaran, Stéphane Emery, Pedro Cruz-Romero, Chunmin Zhang et al.
Sensor Technology and Measurement Systems
article

A high-PSRR and low-noise CMOS-based reference with barrel shifting and notch filtering

Amrith Sukumaran, Stéphane Emery, Pedro Cruz-Romero, Chunmin Zhang, F. L. Caruso, Enrico Miotello
article en

Abstract

This work presents a fully integrated, low-noise, CMOS reference generator capable of operating at supply voltages from 0.7 V up to 1.5 V. A 3-phase barrel shifting technique is proposed to upconvert the flicker noise, achieving an integrated noise of 19.7 μV<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rms</inf> over a 10 kHz bandwidth under typical conditions (0.7 V, 27 °C), without needing bulky off-chip filters. The untrimmed reference voltage from post-layout simulations exhibits an average temperature drift of 30 ppm/°C across the full temperature range of -40 °C to 125 °C. A 2-stage switched-capacitor notch filter that is proposed, brings a 60-fold reduction in the upconverted voltage ripple, and a 40 dB reduction in thermal noise at 10kHz while resulting in an exceptional Power Supply Rejection Ratio (PSRR) of -95 dB at 50 Hz. The circuit is implemented in a 22-nm FDSOI process, occupying an area of only 0.01 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> while consuming a power of 288 nW at the typical condition.

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