A K-/Ka-band High-Power Single-Pole-Double-Throw Switch Featuring Absorptive Characteristic

A K-/Ka-band high-power single-pole-double-throw (SPDT) switch featuring absorptive characteristic for mobile satellite communication (SATCOM) phased arrays is presented in this work. Conventionally, the operating bandwidth of the absorptive RF switches were limited due to the adoption of two quarter-wavelength transmission lines for the reflective and absorptive branch. Through theoretical analysis, a wideband absorptive SPDT switch was realized using the 0.12-μm GaN/SiC high-electron mobility transistor (HEMT) technology. The experimental results have demonstrated an insertion loss of less than 3.2 dB, an isolation of greater than 26.2 dB, and an input 0.1-dB compression point (P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</inf>dB) of better than 32.6 dBm from the 17-30 GHz, respectively.

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Publication Details

Published
2025-05-25
DOI
https://doi.org/10.1109/iscas56072.2025.11043901
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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article

A K-/Ka-band High-Power Single-Pole-Double-Throw Switch Featuring Absorptive Characteristic

Heng‐Tung Hsu, Haotian Luo, Yi‐Fan Tsao
1 citations
GaN-based semiconductor devices and materials
1.26
article

A K-/Ka-band High-Power Single-Pole-Double-Throw Switch Featuring Absorptive Characteristic

Heng‐Tung Hsu, Haotian Luo, Yi‐Fan Tsao
article en
1 citations

Abstract

A K-/Ka-band high-power single-pole-double-throw (SPDT) switch featuring absorptive characteristic for mobile satellite communication (SATCOM) phased arrays is presented in this work. Conventionally, the operating bandwidth of the absorptive RF switches were limited due to the adoption of two quarter-wavelength transmission lines for the reflective and absorptive branch. Through theoretical analysis, a wideband absorptive SPDT switch was realized using the 0.12-μm GaN/SiC high-electron mobility transistor (HEMT) technology. The experimental results have demonstrated an insertion loss of less than 3.2 dB, an isolation of greater than 26.2 dB, and an input 0.1-dB compression point (P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</inf>dB) of better than 32.6 dBm from the 17-30 GHz, respectively.

National Yang Ming Chiao Tung University (TW)
National Science and Technology Council
Affordable and clean energy
Openalex Percentile: Top 20%
GaN-based semiconductor devices and materials
1.26
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