A K-/Ka-band High-Power Single-Pole-Double-Throw Switch Featuring Absorptive Characteristic
A K-/Ka-band high-power single-pole-double-throw (SPDT) switch featuring absorptive characteristic for mobile satellite communication (SATCOM) phased arrays is presented in this work. Conventionally, the operating bandwidth of the absorptive RF switches were limited due to the adoption of two quarter-wavelength transmission lines for the reflective and absorptive branch. Through theoretical analysis, a wideband absorptive SPDT switch was realized using the 0.12-μm GaN/SiC high-electron mobility transistor (HEMT) technology. The experimental results have demonstrated an insertion loss of less than 3.2 dB, an isolation of greater than 26.2 dB, and an input 0.1-dB compression point (P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</inf>dB) of better than 32.6 dBm from the 17-30 GHz, respectively.
Authors
- Heng‐Tung Hsu (ORCID: https://orcid.org/0000-0002-7753-5690)
- Haotian Luo
- Yi‐Fan Tsao (ORCID: https://orcid.org/0000-0001-6601-8308)
Institutions
- National Yang Ming Chiao Tung University (TW)
Publication Details
- Published
- 2025-05-25
- DOI
- https://doi.org/10.1109/iscas56072.2025.11043901
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- National Science and Technology Council