Breakdown in Polysilicon Resistors Operating in the Deep Cryogenic Regime

The most promising solution for implementing future quantum computers is to merge the operation of the control and readout electronics into the cryogenic environment required by qubits by its monolithic integration using nanometer CMOS processes. To achieve this and follow the integrated circuit design flow, it is mandatory to develop accurate simulation models of the operation of CMOS devices in the deep cryogenic regime. This work provides an analysis of the operation of CMOS integrated polysilicon resistors in conditions of large current density, this is, close to their breakdown voltage. The experimental results show that while current increases in the integrated resistors as temperature is brought to the cryogenic regime, the impact of resistor breakdown is drastically reduced and even eliminated at deep cryogenic temperatures. This will allow for further scaling of these devices when used in quantum computing applications.