A 48V Input Merged Cross-Connected Double Step-Down Converter with Package-Integrated GaN Switches and Silicon Controller IC
This paper presents a new hybrid converter with a capacitive dual-path, merged cross-connected (CC) double step-down (DSD) to achieve high efficiency with 24% conduction loss reduction and 25% switching loss reduction. The flip-chip GaN devices, silicon gate drivers with a controller chip, flying capacitors, and bootstrapping (BST) capacitors are heterogeneously integrated on an organic package, a system in package (SiP) implementation to enable high-frequency operation. The simulated peak efficiencies are 93.6% and 84.8% for 48V-to-3V and 48V-to-1V conversions, respectively, at 2.5MHz.
Authors
- Young-Seok Noh (ORCID: https://orcid.org/0000-0003-0050-7760)
- Minxiang Gong (ORCID: https://orcid.org/0000-0002-5426-7697)
- Hua Chen (ORCID: https://orcid.org/0000-0003-2999-7134)
- Arijit Raychowdhury (ORCID: https://orcid.org/0000-0001-8391-0576)
Institutions
- Georgia Institute of Technology (US)
- Intel (United States) (US)
Publication Details
- Published
- 2025-05-25
- DOI
- https://doi.org/10.1109/iscas56072.2025.11043543
- Primary Topic
- Advanced DC-DC Converters
- Type
- article
- Field-Weighted Citation Impact
- 0.00