Electrostatically Adaptable Current Mirror based on Germanium Field-Effect Transistors

Reconfigurable field-effect transistors (RFETs), allowing dynamic run-time switching between n- and p-type operation, are already considered a viable CMOS add-on technology to enable adaptive computing concepts. Beyond that, exploiting the multi-gate architecture of RFETs can also be beneficial for analog circuits but has been less explored. Here, we experimentally demonstrate an adaptive current mirror based on Ge RFETs with the ability of electrostatic compensation of device-to-device variations, enabling an ideal current mirror that can even be switched between n- and p-type operation. Furthermore, the I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">IN</inf>-ratio can be adjusted electrostatically without the need for additional devices. This enhances the abilities of traditional current mirrors that are not adjustable after manufacturing without the need for complex additional circuitry.