A 1Mb RRAM Macro with Bipolar Forming for Improved Programming Yield and Cell-by-cell Write Verification Scheme

Resistive RAM(RRAM) has emerged as a promising candidate for the next generation non-volatile memories (NVMs) due to its low write voltage, compact area, and CMOS compatibility. In this work, we propose a 1Mb RRAM macro with bipolar forming to reduce the forming voltage and improve the programming yield. Additionally, a cell-by-cell write verification scheme is introduced to protect RRAM cells from overstress and improve RRAM yield. The test chip, fabricated using 40nm CMOS technology, occupies a core area of 2.34 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.