A CMOS Power-Efficient Continuous-Time Delta-Sigma Resistor-to-Digital Converter for Force-Sensing Applications

This paper presents an energy-efficient resistor-to-digital converter (RDC) to detect a wide resistance range force sensing resistor (FSR). The proposed RDC leverages a delta-sigma architecture, enabling a high linear readout range while maintaining excellent power efficiency. The design was fabricated in a 0.18-μm CMOS process. The SNDR of the design achieves 75.3 dB with a rapid measurement time of 0.17 ms while consuming only 42.78 μW. The energy efficiency figure of merit (FoM) is 1.54 pJ per measurement, and the architecture maintains 0.999 R<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> linearity in the resistance measurement range from 6.8 kΩ to 2.2 MΩ. The chip area is 2 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.

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Published
2025-05-25
DOI
https://doi.org/10.1109/iscas56072.2025.11044133
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

A CMOS Power-Efficient Continuous-Time Delta-Sigma Resistor-to-Digital Converter for Force-Sensing Applications

Yu‐Te Liao, Chia‐Chi Hsieh, Min-Hua Chang, Meng-Hsun Yu et al.
Analog and Mixed-Signal Circuit Design
article

A CMOS Power-Efficient Continuous-Time Delta-Sigma Resistor-to-Digital Converter for Force-Sensing Applications

Yu‐Te Liao, Chia‐Chi Hsieh, Min-Hua Chang, Meng-Hsun Yu, Rongqiang Lin
article en

Abstract

This paper presents an energy-efficient resistor-to-digital converter (RDC) to detect a wide resistance range force sensing resistor (FSR). The proposed RDC leverages a delta-sigma architecture, enabling a high linear readout range while maintaining excellent power efficiency. The design was fabricated in a 0.18-μm CMOS process. The SNDR of the design achieves 75.3 dB with a rapid measurement time of 0.17 ms while consuming only 42.78 μW. The energy efficiency figure of merit (FoM) is 1.54 pJ per measurement, and the architecture maintains 0.999 R<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> linearity in the resistance measurement range from 6.8 kΩ to 2.2 MΩ. The chip area is 2 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.

National Yang Ming Chiao Tung University (TW)
National Science and Technology Council
Affordable and clean energy
Openalex Percentile: Top 86%
Analog and Mixed-Signal Circuit Design
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A CMOS Power-Efficient Continuous-Time Delta-Sigma Resistor-to-Digital Converter for Force-Sensing Applications — Yu‐Te Liao, Chia‐Chi Hsieh, et al. · (2025) | TGRS Research Map | TGRS