A Low-Noise, High-Input-Impedance Pre-Amplifier for Piezoelectric MEMS Microphone

This paper proposes a low-noise, high-input-impedance pre-amplifier for piezoelectric MEMS microphones. It connects directly to the piezoelectric audio sensor without the need for auxiliary biases and operates under a low supply voltage, with a low power consumption, and a small silicon footprint. To recognize a wide range of sound pressure levels with low THD, the pre-amplifier can switch between two modes, i.e., a 20dB high-gain mode and a 10dB low-gain mode. It also incorporates an impedance-enhanced ESD design for the IO pads and a source follower for impedance conversion and input noise suppression. The design is implemented in 0.18-µm CMOS process, and the performance estimation is based on post-layout simulation. The input referred noise of the proposed pre-amplifier is 8.77µVrms in low-gain mode and 3.65µVrms in high-gain mode. it also features a DC input impedance of 190 GΩ, 74.56 dB PSRR, 10.4/20.9 dB system gain, 0.136%/0.044% THD with 94 dBSPL input. It consumes 86.5 µA of current under a 1.6-3.6 V power supply and occupies an active silicon area of 0.23 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.

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Published
2025-05-25
DOI
https://doi.org/10.1109/iscas56072.2025.11043764
Citations
1
Primary Topic
Advanced MEMS and NEMS Technologies
Type
article
Field-Weighted Citation Impact
0.73
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article

A Low-Noise, High-Input-Impedance Pre-Amplifier for Piezoelectric MEMS Microphone

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1 citations
Advanced MEMS and NEMS Technologies
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article

A Low-Noise, High-Input-Impedance Pre-Amplifier for Piezoelectric MEMS Microphone

Terry Tao Ye, Weiye Song, Xingbo Wang, Zihan Chen, Yucong Huang
article en
1 citations

Abstract

This paper proposes a low-noise, high-input-impedance pre-amplifier for piezoelectric MEMS microphones. It connects directly to the piezoelectric audio sensor without the need for auxiliary biases and operates under a low supply voltage, with a low power consumption, and a small silicon footprint. To recognize a wide range of sound pressure levels with low THD, the pre-amplifier can switch between two modes, i.e., a 20dB high-gain mode and a 10dB low-gain mode. It also incorporates an impedance-enhanced ESD design for the IO pads and a source follower for impedance conversion and input noise suppression. The design is implemented in 0.18-µm CMOS process, and the performance estimation is based on post-layout simulation. The input referred noise of the proposed pre-amplifier is 8.77µVrms in low-gain mode and 3.65µVrms in high-gain mode. it also features a DC input impedance of 190 GΩ, 74.56 dB PSRR, 10.4/20.9 dB system gain, 0.136%/0.044% THD with 94 dBSPL input. It consumes 86.5 µA of current under a 1.6-3.6 V power supply and occupies an active silicon area of 0.23 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.

Southern University of Science and Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 27%
Advanced MEMS and NEMS Technologies
0.73
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