Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors

This study investigates the role of positively charged oxygen vacancies in the central region of ferroelectric capacitors and their impact on fatigue. It has been found that, during fatigue, positively charged oxygen vacancies accumulate in the central region, leading to significant degradation in device performance. The application of a high-voltage recovery pulse effectively reverses the charge state of these vacancies from positive to neutral and redistributes them uniformly across the device, restoring its performance. This recovery process is analogous to the ’wake-up’ state of the device, demonstrating its potential to restore electrical performance. The results of this study emphasize the importance of controlling the charge state and distribution of oxygen vacancies in the central region to enhance the durability and functionality of ferroelectric devices. This work provides a pathway for the broader and more effective application of ferroelectric materials in advanced semiconductor devices.

Authors

Institutions

Publication Details

Journal
IEEE Journal of the Electron Devices Society
Published
2025-01-01
DOI
https://doi.org/10.1109/jeds.2025.3583931
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors

Ik‐Jyae Kim, Jang‐Sik Lee, Hao Do, Jiwoung Choi
IEEE Journal of the Electron Devices Society
Ferroelectric and Negative Capacitance Devices
article

Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors

Ik‐Jyae Kim, Jang‐Sik Lee, Hao Do, Jiwoung Choi
article en

Abstract

This study investigates the role of positively charged oxygen vacancies in the central region of ferroelectric capacitors and their impact on fatigue. It has been found that, during fatigue, positively charged oxygen vacancies accumulate in the central region, leading to significant degradation in device performance. The application of a high-voltage recovery pulse effectively reverses the charge state of these vacancies from positive to neutral and redistributes them uniformly across the device, restoring its performance. This recovery process is analogous to the ’wake-up’ state of the device, demonstrating its potential to restore electrical performance. The results of this study emphasize the importance of controlling the charge state and distribution of oxygen vacancies in the central region to enhance the durability and functionality of ferroelectric devices. This work provides a pathway for the broader and more effective application of ferroelectric materials in advanced semiconductor devices.

IEEE Journal of the Electron Devices SocietyVol. 13
Pohang University of Science and Technology (KR)
National Research Foundation of Korea
Openalex Percentile: Top 87%
Ferroelectric and Negative Capacitance Devices
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Unraveling the Origins of Fatigue in Hafnia Ferroelectric Capacitors — Ik‐Jyae Kim, Jang‐Sik Lee, et al. · IEEE Journal of the Electron Devices Society (2025) | TGRS Research Map | TGRS