Memristor Resistance State Tuning with High-Frequency Periodic Inputs

Realized memristors exhibit a unique phenomenon called the fading memory effect, where the memristor response to an AC signal is determined by its characteristics (waveform, amplitude, frequency, and DC offset) rather than the memristor initial conditions. Recently, a method for programming Hewlett Packard’s TaO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> memristor to a target state was proposed, involving configuring the DC offset of a high-frequency square-wave AC voltage input. This served as a basic application example that exploits fading memory in non-volatile memristors, but didn’t consider non-ideal effects. Here, we assess the method applicability in a HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>-based VCM resistive switch from Forschungszentrum Julich incorporating a variability-aware physics-based model.