A High-Speed and Compact On-Chip CMOS Temperature Sensor for 3D-NAND Flash Memory
This paper presents temperature sensing system for 3D-NAND Flash designed for high-speed conversion speed and minimal area. The proposed temperature sensor generates temperature-independent current that produces constant slope voltage, facilitating direct temperature sensing for high-speed conversion. By using a diode-connected NMOS to track threshold voltage (VTH) variations with temperature, the area is significantly minimized. Implemented in 28nm CMOS process, the entire system achieves conversion time of 3.77µs within -40°C to 125°C temperature range and occupies active area of 3900µm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. It provides inaccuracy of -2.52°C to +1.74°C after 2-points calibration, with 0.74°C resolution. From an energy efficiency perspective, the system consumes 0.25nJ.
Authors
- Dojeon Lee
- Suhwan Kim (ORCID: https://orcid.org/0000-0001-9107-2963)
Institutions
- Seoul National University (KR)
Publication Details
- Published
- 2025-05-25
- DOI
- https://doi.org/10.1109/iscas56072.2025.11043975
- Primary Topic
- CCD and CMOS Imaging Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.00