Low Matchline Voltage Swing Content-Addressable Memory Cell

Content-addressable memory (CAM) is a specialized memory architecture designed for fast data searches, allowing a one-clock-cycle comparison between the search input and the entire memory content. In this work, a low matchline voltage swing CAM is proposed to reduce the search power consumption while maintaining high-speed search operations. Low voltage swing in the matchline is enabled by introducing extra circuitry in the conventional CAM cell. By means of comprehensive Monte Carlo and post-layout simulations using a commercial 65nm node, we show that the proposed CAM cell design allows for robustness against process, voltage, and temperature variations without the need for dedicated matchline sense schemes. Compared to conventional precharge high NOR-type CAM, the proposed design achieves 42% higher speed and 29<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">.</inf>1% less energy consumption. Post-layout results demonstrate that the proposed CAM operates reliably at 0.6V, maintaining performant and reliable search operations across a wide temperature range.