Design and Analysis of GaN Based Isolated Double-Step-Down Converter for High-Step-Down Application

This paper presents a new isolated topology for high-step-down applications. The proposed converter derives from DSD (double-step-down) converter employing one flying capacitor as energy bus and dual-inductor output stage. Unlike other PWM isolated DC-DC topologies, the new design achieves exceptionally high component utilization and features a simplified structure, resulting in reduced voltage and current stress on switches and negative components. These benefits contribute to lower costs, decreased conduction losses, and enhanced reliability of power systems, particularly in applications with high conversion ratios. By appropriately adjusting the dead time, the switches on the secondary side can operate in zero-voltage-switching (ZVS) soft-switching mode. After optimization of the switching scheme and analysis of non-ideal effects, simulation validation is performed. To demonstrate the practical applicability of the new topology in high step-down applications, a 100KHz prototype featuring 60V/48V-to-1V transfer with up to 70A output current is built up with 92.6% peak efficiency.

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Published
2025-05-25
DOI
https://doi.org/10.1109/iscas56072.2025.11044110
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Design and Analysis of GaN Based Isolated Double-Step-Down Converter for High-Step-Down Application

Jiayin He, Ju Gao, Ziheng Liu, Hong‐Jie Peng et al.
3 links
GaN-based semiconductor devices and materials
article

Design and Analysis of GaN Based Isolated Double-Step-Down Converter for High-Step-Down Application

Jiayin He, Ju Gao, Ziheng Liu, Hong‐Jie Peng, Jinyan Wang, Xin Wang
article en

Abstract

This paper presents a new isolated topology for high-step-down applications. The proposed converter derives from DSD (double-step-down) converter employing one flying capacitor as energy bus and dual-inductor output stage. Unlike other PWM isolated DC-DC topologies, the new design achieves exceptionally high component utilization and features a simplified structure, resulting in reduced voltage and current stress on switches and negative components. These benefits contribute to lower costs, decreased conduction losses, and enhanced reliability of power systems, particularly in applications with high conversion ratios. By appropriately adjusting the dead time, the switches on the secondary side can operate in zero-voltage-switching (ZVS) soft-switching mode. After optimization of the switching scheme and analysis of non-ideal effects, simulation validation is performed. To demonstrate the practical applicability of the new topology in high step-down applications, a 100KHz prototype featuring 60V/48V-to-1V transfer with up to 70A output current is built up with 92.6% peak efficiency.

Peking University (CN)
Openalex Percentile: Top 91%
GaN-based semiconductor devices and materials
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Design and Analysis of GaN Based Isolated Double-Step-Down Converter for High-Step-Down Application — Jiayin He, Ju Gao, et al. · (2025) | TGRS Research Map | TGRS