28/39 GHz Dual-Band GaN Power Amplifier Design
In this paper, a 28 GHz/39 GHz dual-band monolithic microwave integrated circuit (MMIC) gallium nitride (GaN) power amplifier has been proposed for the long-range millimeter-wave radar and 5G communication applications. The amplifier integrates a driver and a power circuit, utilizing a commercial 40 nm GaN technology. Unique low-loss dual frequency matching circuits are employed to ensure high efficiency at the desired output power. The simulation results show that the power amplifier achieves a saturated output power of above 31 dBm at both frequencies, with a power-added efficiency (PAE) exceeding 36%.
Authors
- Swarup Chakraborty (ORCID: https://orcid.org/0000-0001-5495-6161)
- Tian Xia (ORCID: https://orcid.org/0000-0001-5117-9432)
Institutions
- University of Vermont (US)
Publication Details
- Published
- 2025-05-25
- DOI
- https://doi.org/10.1109/iscas56072.2025.11043845
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00