A 43 µm × 269 µm, Light-Tolerant and Power-Adaptive Forward-Bulk Optoelectrical Microsystem for Tetherless Neural Recording

A sub-nanoliter, light-tolerant (780 µW/mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>), and power-adaptive forward-bulk optoelectronic microsystem for tetherless neural recording is presented. The CMOS bulk is used as a power harvester to utilize photogenerated carriers and a lower transistor threshold voltage for low power design (~0.3 µA at ~0.32 V). Increasing optical power boosts the system bandwidth to 14 kHz and the sampling frequency to 18.2 kHz, while maintaining the integrated input-referred noise (~10 µV<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RMS</inf>) stable, with an NEF of 2.34.