A One-Off-Chip-Capacitor Wireless High-Voltage Power Management Unit Generating Regulated Supplies with 80.6-dB-PSRR in Low-Voltage CMOS

Miniaturized implantable stimulation systems are of great significance in the treatment of cardiac and neurological diseases. This paper presents a high-voltage wireless power management unit (WPMU) for battery-less stimulation systems, which features only one off-chip capacitor and compatibility with low-voltage CMOS technology. A 21-stage differentially driven rectifier is employed to generate a 9-V high-voltage supply. The bandgap reference and capless LDOs are realized in a transistor-stacking topology, which not only directly operate under high-voltage supplies, but also achieve remarkable power supply rejection performances. The IC is fabricated in an 180-nm standard CMOS technology. Measurement results show the maximum power conversion efficiency to be 74.2%. The power supply of the bandgap reference and the LDOs ranges from 7.8 V to 10 V and the power supply rejection ratio (PSRR) reaches 80.6 dB.

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Published
2025-05-25
DOI
https://doi.org/10.1109/iscas56072.2025.11043938
Primary Topic
Wireless Power Transfer Systems
Type
article
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article

A One-Off-Chip-Capacitor Wireless High-Voltage Power Management Unit Generating Regulated Supplies with 80.6-dB-PSRR in Low-Voltage CMOS

Ang Hu, Hongming Lyu, Yi Ding
Wireless Power Transfer Systems
article

A One-Off-Chip-Capacitor Wireless High-Voltage Power Management Unit Generating Regulated Supplies with 80.6-dB-PSRR in Low-Voltage CMOS

Ang Hu, Hongming Lyu, Yi Ding
article en

Abstract

Miniaturized implantable stimulation systems are of great significance in the treatment of cardiac and neurological diseases. This paper presents a high-voltage wireless power management unit (WPMU) for battery-less stimulation systems, which features only one off-chip capacitor and compatibility with low-voltage CMOS technology. A 21-stage differentially driven rectifier is employed to generate a 9-V high-voltage supply. The bandgap reference and capless LDOs are realized in a transistor-stacking topology, which not only directly operate under high-voltage supplies, but also achieve remarkable power supply rejection performances. The IC is fabricated in an 180-nm standard CMOS technology. Measurement results show the maximum power conversion efficiency to be 74.2%. The power supply of the bandgap reference and the LDOs ranges from 7.8 V to 10 V and the power supply rejection ratio (PSRR) reaches 80.6 dB.

ShanghaiTech University (CN)
Affordable and clean energy
Openalex Percentile: Top 87%
Wireless Power Transfer Systems
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