900-nW 876-MHz -79-dBm Pulse-Driven MEMS Oscillator based Sub-Sampling OOK/FSK WuRX

This work presents an 876-MHz pulse-driven MEMS oscillator based sub-sampling wake-up receiver (WuRx) to achieve both low power and higher sensitivity. It employed 1) pulse-driven MEMS oscillator to lower the LO power; 2) 12-path sub-sampling mixer-first architecture to lower the energy needed for down-conversion; 3) baseband complex filter to support OOK/FSK modulation with good SIR rejection; 4) Transformer-based matching network to achieve passive gain. The WuRx is fabricated in TSMC 40nm CMOS technology, occupying a core area of 1.73 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (excluding MEMS resonator), and it realizes a sensitivity of -79/-73 dBm for OOK/FSK demodulation, respectively, while limiting the system power consumption to 579.5 μW at the continuous mode with the data rate of 160 kbps, and only 900 nW with the duty cycle ratio of 0.14% at 64 bps under 0.8-V supply voltage. In addition, the best SIR of -20 dB at an offset frequency of 1 MHz is achieved.

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Published
2025-05-25
DOI
https://doi.org/10.1109/iscas56072.2025.11044272
Primary Topic
Advanced MEMS and NEMS Technologies
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article
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article

900-nW 876-MHz -79-dBm Pulse-Driven MEMS Oscillator based Sub-Sampling OOK/FSK WuRX

Yao Zhu, Z. He, Chun-Huat Heng, Ying Zhang et al.
Advanced MEMS and NEMS Technologies
article

900-nW 876-MHz -79-dBm Pulse-Driven MEMS Oscillator based Sub-Sampling OOK/FSK WuRX

Yao Zhu, Z. He, Chun-Huat Heng, Ying Zhang, Junheng Tao
article en

Abstract

This work presents an 876-MHz pulse-driven MEMS oscillator based sub-sampling wake-up receiver (WuRx) to achieve both low power and higher sensitivity. It employed 1) pulse-driven MEMS oscillator to lower the LO power; 2) 12-path sub-sampling mixer-first architecture to lower the energy needed for down-conversion; 3) baseband complex filter to support OOK/FSK modulation with good SIR rejection; 4) Transformer-based matching network to achieve passive gain. The WuRx is fabricated in TSMC 40nm CMOS technology, occupying a core area of 1.73 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (excluding MEMS resonator), and it realizes a sensitivity of -79/-73 dBm for OOK/FSK demodulation, respectively, while limiting the system power consumption to 579.5 μW at the continuous mode with the data rate of 160 kbps, and only 900 nW with the duty cycle ratio of 0.14% at 64 bps under 0.8-V supply voltage. In addition, the best SIR of -20 dB at an offset frequency of 1 MHz is achieved.

Agency for Science, Technology and Research (SG), National University of Singapore (SG), Institute of Microelectronics (SG)
Affordable and clean energy
Openalex Percentile: Top 87%
Advanced MEMS and NEMS Technologies
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