van der Waals epitaxial growth of hexagonal boron nitride on graphene for enhanced deep ultraviolet sensing performance
Achieved wafer-scale van der Waals growth of 2D h-BN on graphene via MOCVD. Developed graphene buffer layer for uniform h-BN growth. Improved DUV photodetector performance using h-BN/graphene heterostructure.
Authors
- Trần Viết Cường (ORCID: https://orcid.org/0000-0001-9225-6596)
- Kang Bok Ko
- Huỳnh Trần Mỹ Hòa (ORCID: https://orcid.org/0000-0001-5763-5662)
- Thien Trang Nguyen
- Seong-Jun Kim (ORCID: https://orcid.org/0000-0002-4410-7403)
- Park Young-Jae (ORCID: https://orcid.org/0000-0003-0038-7615)
- Hoang Hung Nguyen (ORCID: https://orcid.org/0009-0004-6159-7450)
- Anh Hao Huynh Vo
Institutions
- Pohang University of Science and Technology (KR)
- Trường ĐH Nguyễn Tất Thành (VN)
- Jeonbuk National University (KR)
Publication Details
- Journal
- Materials Advances
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ma00044k
- Citations
- 1
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.52
Funders
- Trường Đại học Nguyễn Tất Thành
- National Research Foundation
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea