Low-Noise, High PSRR and Temperature-Stable Voltage Reference for MEMS-Based Acceleration Sensor Systems

This paper presents a voltage reference for MEMS-based accelerometer systems in consumer-based applications, where stability under varying temperature conditions is essential for accurate sensor output. Furthermore, a high-power supply rejection ratio (PSRR) is critical for maintaining sensor performance and ensuring reliable, precise measurements. Therefore, dual PSRR enhancement stages are employed to achieve high PSRR. The first stage utilizes a flipped voltage follower to suppress the power supply noise, while the second stage isolates the reference voltage from variations in the power supply. To minimize output noise, a MOSFET low-pass filter with a feedback technique is integrated into the second stage of the PSRR, stabilizing the PSRR while reducing the output noise. A temperature-stable reference voltage is generated through a load NMOS transistor operating in the saturation region, with its gate connected to another NMOS transistor functioning as a resistor. The proposed temperature-stable voltage reference has been designed and simulated using 180[Formula: see text]nm CMOS technology. The simulation results indicate that the circuit achieves a temperature coefficient of 7[Formula: see text]ppm/ ∘ C across a temperature range of [Formula: see text]40 ∘ C to [Formula: see text]C. It provides a stable reference voltage of 0.4467[Formula: see text]V while operating within a supply voltage range of 1[Formula: see text]V to 3[Formula: see text]V. The line sensitivity is measured at 0.089%/V, and the PSRR is [Formula: see text]118.97[Formula: see text]dB at 100[Formula: see text]Hz and [Formula: see text]118.9[Formula: see text]dB at 10[Formula: see text]kHz. The circuit exhibits a low power consumption of 0.57[Formula: see text] [Formula: see text]W and occupies a compact area of 0.001[Formula: see text]mm 2 . The noise analysis focuses on the frequency range of 10[Formula: see text]Hz to 10[Formula: see text]MHz, which corresponds to the operational bandwidth of the targeted consumer-based sensor application. It exhibits output noise levels of [Formula: see text]Hz at 10[Formula: see text]Hz and 14.8[Formula: see text]nV/[Formula: see text]Hz at 100[Formula: see text]Hz.

Authors

Institutions

Publication Details

Journal
Journal of Circuits Systems and Computers
Published
2025-06-27
DOI
https://doi.org/10.1142/s0218126625503888
Citations
1
Primary Topic
Advanced MEMS and NEMS Technologies
Type
article
Field-Weighted Citation Impact
0.73
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Low-Noise, High PSRR and Temperature-Stable Voltage Reference for MEMS-Based Acceleration Sensor Systems

Rishikesh Pandey, Vandana Niranjan, Komal Duggal
1 citations
Journal of Circuits Systems and Computers
Advanced MEMS and NEMS Technologies
0.73
article

Low-Noise, High PSRR and Temperature-Stable Voltage Reference for MEMS-Based Acceleration Sensor Systems

Rishikesh Pandey, Vandana Niranjan, Komal Duggal
article en
1 citations

Abstract

This paper presents a voltage reference for MEMS-based accelerometer systems in consumer-based applications, where stability under varying temperature conditions is essential for accurate sensor output. Furthermore, a high-power supply rejection ratio (PSRR) is critical for maintaining sensor performance and ensuring reliable, precise measurements. Therefore, dual PSRR enhancement stages are employed to achieve high PSRR. The first stage utilizes a flipped voltage follower to suppress the power supply noise, while the second stage isolates the reference voltage from variations in the power supply. To minimize output noise, a MOSFET low-pass filter with a feedback technique is integrated into the second stage of the PSRR, stabilizing the PSRR while reducing the output noise. A temperature-stable reference voltage is generated through a load NMOS transistor operating in the saturation region, with its gate connected to another NMOS transistor functioning as a resistor. The proposed temperature-stable voltage reference has been designed and simulated using 180[Formula: see text]nm CMOS technology. The simulation results indicate that the circuit achieves a temperature coefficient of 7[Formula: see text]ppm/ ∘ C across a temperature range of [Formula: see text]40 ∘ C to [Formula: see text]C. It provides a stable reference voltage of 0.4467[Formula: see text]V while operating within a supply voltage range of 1[Formula: see text]V to 3[Formula: see text]V. The line sensitivity is measured at 0.089%/V, and the PSRR is [Formula: see text]118.97[Formula: see text]dB at 100[Formula: see text]Hz and [Formula: see text]118.9[Formula: see text]dB at 10[Formula: see text]kHz. The circuit exhibits a low power consumption of 0.57[Formula: see text] [Formula: see text]W and occupies a compact area of 0.001[Formula: see text]mm 2 . The noise analysis focuses on the frequency range of 10[Formula: see text]Hz to 10[Formula: see text]MHz, which corresponds to the operational bandwidth of the targeted consumer-based sensor application. It exhibits output noise levels of [Formula: see text]Hz at 10[Formula: see text]Hz and 14.8[Formula: see text]nV/[Formula: see text]Hz at 100[Formula: see text]Hz.

Journal of Circuits Systems and ComputersVol. 34(18)
Thapar Institute of Engineering & Technology (IN), Indira Gandhi Delhi Technical University for Women (IN)
Affordable and clean energy
Openalex Percentile: Top 27%
Advanced MEMS and NEMS Technologies
0.73
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.