Tunnel-optical electron transitions in an asymmetric double quantum dot under correction field

Abstract Quantum operations on a charge qubit, which is represented by a single-electron double quantum dot (QD) with structure asymmetry, are considered. It is shown that with the help of an electric field created by voltage gates the tunnel coupling of the QD excited states is possible to control. An algorithm for performing single-qubit rotations based on a sequence of tunnel and optical transitions is described. The dependences of the correction electric field on geometric parameters of the gates are calculated.

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Publication Details

Journal
Laser Physics Letters
Published
2025-06-27
DOI
https://doi.org/10.1088/1612-202x/ade078
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
1.25
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article

Tunnel-optical electron transitions in an asymmetric double quantum dot under correction field

I. Yu. Kateev, A. V. Tsukanov
1 citations
Laser Physics Letters
Semiconductor Quantum Structures and Devices
1.25
article

Tunnel-optical electron transitions in an asymmetric double quantum dot under correction field

I. Yu. Kateev, A. V. Tsukanov
article en
1 citations

Abstract

Abstract Quantum operations on a charge qubit, which is represented by a single-electron double quantum dot (QD) with structure asymmetry, are considered. It is shown that with the help of an electric field created by voltage gates the tunnel coupling of the QD excited states is possible to control. An algorithm for performing single-qubit rotations based on a sequence of tunnel and optical transitions is described. The dependences of the correction electric field on geometric parameters of the gates are calculated.

Laser Physics LettersVol. 22(7)
Kurchatov Institute (RU)
Openalex Percentile: Top 20%
Semiconductor Quantum Structures and Devices
1.25
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