Experimental demonstration of in-memory computing using pressure stimulated SnO<sub>2−<i>x</i></sub>-based memristive device as inverter and active-low 2 : 1 multiplexer
This article reports a resistive chip-enabler logic inverter and an active-low 2 : 1 multiplexer based on Ag/SnO 2− x /ITO structured pressure-sensitive memristive devices for in-memory computing applications.
Authors
- Sanghamitra Debroy
- Parikshit Sahatiya (ORCID: https://orcid.org/0000-0002-7379-8290)
- Subhradeep Pal (ORCID: https://orcid.org/0000-0001-6021-4391)
- Soumi Saha (ORCID: https://orcid.org/0000-0002-0202-9873)
- Venkat Mattela (ORCID: https://orcid.org/0000-0002-6826-9837)
- Surya Shankar Dan (ORCID: https://orcid.org/0000-0003-2767-4999)
- Akshaykumar Salimath (ORCID: https://orcid.org/0000-0002-4675-6570)
- Bishal Kumar Keshari
Institutions
- Centre de Recherche en Mathématiques de la Décision (FR)
- Oil and Natural Gas Corporation (India) (IN)
- Birla Institute of Technology and Science - Hyderabad Campus (IN)
- Birla Institute of Technology and Science, Pilani (IN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01687h
- Citations
- 1
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.73