Ferroelectric and field-induced ferroelectric phase formation in atomic-layer-deposited ZrO<sub>2</sub> thin films with TiN electrodes
This study explores the origin of ferroelectric phase formation in 10-nm-thick ALD ZrO 2 films by analyzing structural and electrical properties as a function of deposition temperature (280–310 °C) and post-metallization annealing.
Authors
- Kyung Do Kim (ORCID: https://orcid.org/0000-0001-5296-2349)
- Yeon Jae Kim
- Cheol Seong Hwang (ORCID: https://orcid.org/0000-0002-6254-9758)
- Seong Jae Shin
- Jae Hee Song (ORCID: https://orcid.org/0000-0002-6716-5681)
- Han Sol Park
- Seung Yong Byun
- Jonghoon Shin (ORCID: https://orcid.org/0000-0003-1721-1253)
- Hyun Woo Nam
- In Soo Lee (ORCID: https://orcid.org/0000-0003-4299-7227)
- Suk Hyun Lee
Institutions
- SK Group (South Korea) (KR)
- Seoul National University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01449b
- Citations
- 1
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- Ministry of Trade, Industry and Energy
- National Research Foundation of Korea