Physics-Based GaN HEMT Device Modeling for MIMC

A scalable physics-based compact model for GaN HEMT devices has been introduced. Considering the non-uniform configuration of the electrical field, potential, and electron concentration distributions, the conduction current has been analytically derived, overcoming the Gradual Channel Approximation limitation. The electron mobility was calculated using TCAD-based equations, assuming an averaged over-length driving force and vertical electrical field. In addition, the model incorporates the analytical solution of the 3D heat transfer equation, capturing the self-heating effect regardless of the material used and geometry. The model's accuracy and scalability were thoroughly tested by comparing the simulation to the experimental data for several GaN devices with different geometry. The high consistency between simulation and measured data highlights the physical level and scalability, which will address the needs of MIMC designers.