Hierarchical Clustering for TLP ESD Characterization of Multi-Finger ggNMOSTs
We propose a characterization method for evaluating the ESD behavior of multi-finger Grounded Gate NMOS or ggNMOS transistors using TLP stress data (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}, \mathrm{I}, I_{\text {leak }}$</tex>). By employing a hierarchical clustering with Mahalanobis distance, the approach addresses challenges in analyzing data with noise and variability using real-world techniques, such as conventional Transmission Line Pulsing (TLP) testing platform. The proposed method enhances data integrity by identifying and excluding the unexpected behavior of samples caused by measurement or setup issues while providing statistical analyses the characterization of the devices that demonstrate normal behavior.
Authors
- Mehrdad Nourani (ORCID: https://orcid.org/0000-0001-5077-4424)
- Theo Smedes (ORCID: https://orcid.org/0000-0002-4829-2431)
- S.H. Hosseini (ORCID: https://orcid.org/0000-0003-2012-496X)
- Charvaka Duvvury
Institutions
- NXP (Netherlands) (NL)
- The University of Texas at Dallas (US)
Publication Details
- Published
- 2025-04-11
- DOI
- https://doi.org/10.1109/dcas65331.2025.11045464
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00