Solid Solutions in Cu2Se - Ga2Se - In2Se3 Nanothick Films

By electron difraction method the processes of phase formation and phase transitions in Cu2Se -Ga2Se -In2Se3 system thin films have been investigated.By kinematic electron diffraction method it is established that as a result of polycrystalline - transformation of CuIn5Se8 composition ternary compound has been taken place.There have been revealed the formation conditions and phase equilibrium distributed on condensation plane of phases in the form of CuGa5(In5)Se8 ternary compounds and CuGa5(In1-xGax)Se8 composition solid solutions with different ratio of components.

Publication Details

Journal
Advanced Physical Research
Published
2025-06-24
DOI
https://doi.org/10.62476/apr.72196
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
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Solid Solutions in Cu2Se - Ga2Se - In2Se3 Nanothick Films

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Advanced Physical Research
Chalcogenide Semiconductor Thin Films
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Solid Solutions in Cu2Se - Ga2Se - In2Se3 Nanothick Films

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Abstract

By electron difraction method the processes of phase formation and phase transitions in Cu2Se -Ga2Se -In2Se3 system thin films have been investigated.By kinematic electron diffraction method it is established that as a result of polycrystalline - transformation of CuIn5Se8 composition ternary compound has been taken place.There have been revealed the formation conditions and phase equilibrium distributed on condensation plane of phases in the form of CuGa5(In5)Se8 ternary compounds and CuGa5(In1-xGax)Se8 composition solid solutions with different ratio of components.

Advanced Physical ResearchVol. 7(2)
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Chalcogenide Semiconductor Thin Films
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Solid Solutions in Cu2Se - Ga2Se - In2Se3 Nanothick Films · Advanced Physical Research (2025) | TGRS Research Map | TGRS