Topological Surface State Dominated Nonlinear Transverse Response and Microwave Rectification at Room Temperature

Abstract The nonlinear Hall effect (NLHE) has emerged as a powerful tool for probing symmetry and topological properties in quantum materials, offering exciting potential for applications in microwave rectification and energy harvesting. NLHE arises from mechanisms such as the Berry curvature dipole (BCD), skew scattering, and side jump. Unlike BCD, which is confined to materials with low symmetry, skew scattering can exist in systems with 3‐fold rotational symmetry, providing a broader platform for exploring nonlinear phenomena in topological materials. Here, a significant room‐temperature nonlinear transverse response in the 3D topological insulator Bi 2 Te 3 is reported. By preparing high‐quality Bi 2 Te 3 epitaxial films with thicknesses ranging from 7 to 50 nm, it is observed that the nonlinear susceptibility increases with thickness up to 25 nm and then saturates. This behavior is closely linked to the thickness‐dependent electrical conductance, carrier mobility, and crystallinity, underscoring the dominance of a robust topological surface state (TSS) in thicker Bi 2 Te 3 films. Additionally, microwave rectification in Bi 2 Te 3 is demonstrated at frequencies up to 16.6 GHz, showcasing its potential for high‐frequency applications. This work reveals that both linear and nonlinear transport phenomena in Bi 2 Te 3 are governed by the TSS, emphasizing its crucial role in enabling robust room‐temperature nonlinear effects.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-06-24
DOI
https://doi.org/10.1002/adfm.202506694
Citations
2
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
2.49

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Topological Surface State Dominated Nonlinear Transverse Response and Microwave Rectification at Room Temperature

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2 citations
Advanced Functional Materials
Topological Materials and Phenomena
2.49
article

Topological Surface State Dominated Nonlinear Transverse Response and Microwave Rectification at Room Temperature

Xuepeng Qiu, Jinfeng Jia, Longqing Cong, Yan Rong, Dandan Guan, Hao Zheng, Tieyang Zhao, Xiangqiang Duan, Yaoyi Li, Canhua Liu, Yumeng Yang, Ruidan Zhong, Tingxin Li, Jiaxin Chen, Liang Liu, Hongliang Chen, Xiaoxue Liu, Jingsheng Chen, Shiyong Wang, Bin Rong, Q. SHEN
article en
2 citations

Abstract

Abstract The nonlinear Hall effect (NLHE) has emerged as a powerful tool for probing symmetry and topological properties in quantum materials, offering exciting potential for applications in microwave rectification and energy harvesting. NLHE arises from mechanisms such as the Berry curvature dipole (BCD), skew scattering, and side jump. Unlike BCD, which is confined to materials with low symmetry, skew scattering can exist in systems with 3‐fold rotational symmetry, providing a broader platform for exploring nonlinear phenomena in topological materials. Here, a significant room‐temperature nonlinear transverse response in the 3D topological insulator Bi 2 Te 3 is reported. By preparing high‐quality Bi 2 Te 3 epitaxial films with thicknesses ranging from 7 to 50 nm, it is observed that the nonlinear susceptibility increases with thickness up to 25 nm and then saturates. This behavior is closely linked to the thickness‐dependent electrical conductance, carrier mobility, and crystallinity, underscoring the dominance of a robust topological surface state (TSS) in thicker Bi 2 Te 3 films. Additionally, microwave rectification in Bi 2 Te 3 is demonstrated at frequencies up to 16.6 GHz, showcasing its potential for high‐frequency applications. This work reveals that both linear and nonlinear transport phenomena in Bi 2 Te 3 are governed by the TSS, emphasizing its crucial role in enabling robust room‐temperature nonlinear effects.

Advanced Functional MaterialsVol. 35(50)
Tongji University (CN), National University of Singapore (SG), Shanghai Jiao Tong University (CN), Southern University of Science and Technology (CN), ShanghaiTech University (CN)
National Natural Science Foundation of China, Ministry of Science and Technology of the People's Republic of China, Science and Technology Commission of Shanghai Municipality
Openalex Percentile: Top 11%
Topological Materials and Phenomena
2.49
DOISourceOpenAlex
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