Tailoring CZTSSe Solar Cells: Exploring Absorption Layer Thickness for Enhanced Photovoltaic Performance

This study focused on the exploration of the ZnO/Cds/CZTSSe/ MO (S,Se)2 by the variations of the thickness of the active layer. For the Simulations of the device Solar cell capacitance simulator (SCAPS-1D) software is utilized for simulation. In this device ZnO is considered due to its stability and conductivity and Cds is taken as a buffer layer of designed solar cell. Mo(Se,S)2 is considered in this solar cell due to its allowing efficient carrier transport. CZTSSe is considered as the absorption layer of the solar cell due to CZTSSe have a sufficient bandgap of 1.0-1.5eV and absorption coefficients surpassing 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> /cm . The study goal is maximizing the absorption of electrons. The performance of the device is studied in variations of absorption layer from 100nm to 1000nm. The graphs shows the decrement in the PV parameters with increments in the thickness of absorption layer. It is due to the recombination of the charge carrier. The resulted PV parameters of the CZTSSe based solar cell are as follows: VOC: 0.575V, Jsc : 38.01mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , FF: 81% and PCE: 17.69%.