Design and Implementation of Hybrid Memristor-Based Logic Gates for Enhanced Performance in VLSI Applications

Memristors, as next-generation non-volatile memory devices, have inherent characteristics such as resistive switching, history-dependent data storage, and miniaturization, which make them highly suitable for future Very-Large Scale Integration (VLSI) technologies. Nevertheless, factors such as device variability, nonlinear behavior, and high power consumption make it difficult to easily integrate the devices with VLSI circuits. In Addition, Conventional memristor switching methods are likely to lead to high power consumption, which adversely affects overall energy efficiency. To overcome these issues, the current paper proposes a hybrid memristor method that combines voltage and current control systems. The method improves switching stability, minimizes variability, and overall performance in VLSI systems. The hybrid approach in the present work improves compatibility with existing VLSI designs to offer robust and high-performance designs under varying operating conditions. The hybrid memristor, incorporating the best of voltage and current control approaches, improves efficiency and dependability. For electrical performance analysis under varying conditions, the design is simulated and validated using Linear Technology Spice (LTSpice), a well-known circuit simulator tool. Simulation results confirm that the hybrid memristor exhibits greater switching speed, lower power consumption, and better scalability than standard transistor-based devices. Such results confirm that the hybrid memristor is a stable and efficient technology for future memory and logic circuit upgrading, thereby leading to the enhanced performance and flexibility of VLSI applications.