A Template-Assisted Photolithography Strategy for High-Density Halide Perovskite RRAM Crossbar Arrays With Ultralow Operating Voltages

Halide perovskite resistive random access memory (RRAM) has been extensively investigated due to its tremendous potential in nonvolatile memory and neuromorphic computing technologies. However, halide perovskite RRAM crossbar arrays fabricated by semiconductor techniques were scarcely reported due to the challenges of making halide perovskite compatible with a common photolithography processing. Herein, Cs<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sub>AgBiBr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>6</roman></sub>-based RRAM crossbar arrays with a minimum cell area of 5 × 5 μm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sup> were fabricated using polystyrene as a template for photolithography processing. The cells within the crossbar arrays exhibit bipolar resistive switching behaviors with ultralow operating voltages (<0.12 V) and power consumption (<1.44 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> W/switching). In addition, the programming accuracy rates based on the 1/2 bias scheme and 1/3 bias scheme were studied by simulation in MATLAB based on the statistics data. The results suggest that the uniformity of device performance is crucial for one-RRAM (1R) crossbar arrays. A suitable bias scheme and supply voltage (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>dd</roman></sub>) could increase the programming accuracy rate. This work provides a feasible technique to fabricate high-density halide perovskite RRAM crossbar arrays.