A 28-nm CMOS EML Driver for 50G-PON Applications

Targeting the low-cost demands of 50G PON infrastructure, a 28-nm CMOS EML driver is presented. A novel DC-guarded-stack (DG-Stack) output stage is proposed to solve the inconsistency between low and high frequency steady state for improved robustness. An overlapped concentric T-Coil (OC-T-Coil) is designed to enhance bandwidth with half the area. The laser and SOA bias circuits are also integrated to reduce system cost. With low power consumption of 373 mW in a compact 0.586-mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> die area, this design achieves a 50-Gbps NRZ modulation with 2-Vpp single-ended output swing and 7-dB extinction ratio, delivering >11-dBm average launch power.

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Publication Details

Journal
IEEE Photonics Technology Letters
Published
2025-06-24
DOI
https://doi.org/10.1109/lpt.2025.3582785
Citations
1
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.73

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article

A 28-nm CMOS EML Driver for 50G-PON Applications

Donghe Tu, Li Geng, Yifei Xia, Ruixuan Yang et al.
1 citations
IEEE Photonics Technology Letters
Photonic and Optical Devices
0.73
article

A 28-nm CMOS EML Driver for 50G-PON Applications

Donghe Tu, Li Geng, Yifei Xia, Ruixuan Yang, Dan Li, Zhiyong Li, Cong Li, Y. Dang
article en
1 citations

Abstract

Targeting the low-cost demands of 50G PON infrastructure, a 28-nm CMOS EML driver is presented. A novel DC-guarded-stack (DG-Stack) output stage is proposed to solve the inconsistency between low and high frequency steady state for improved robustness. An overlapped concentric T-Coil (OC-T-Coil) is designed to enhance bandwidth with half the area. The laser and SOA bias circuits are also integrated to reduce system cost. With low power consumption of 373 mW in a compact 0.586-mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> die area, this design achieves a 50-Gbps NRZ modulation with 2-Vpp single-ended output swing and 7-dB extinction ratio, delivering >11-dBm average launch power.

IEEE Photonics Technology LettersVol. 37(19)
Chinese Academy of Sciences (CN), State Key Laboratory on Integrated Optoelectronics (CN), Institute of Semiconductors (CN), Xi'an Jiaotong University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 27%
Photonic and Optical Devices
0.73
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A 28-nm CMOS EML Driver for 50G-PON Applications — Donghe Tu, Li Geng, et al. · IEEE Photonics Technology Letters (2025) | TGRS Research Map | TGRS