Electrical analytical approach for hydrogen sensing of Al0.43Ga0.57As/La2O3: Pt-based CSDG MOSFET

Abstract Nanotechnology has enabled novel sensing approaches with significant potential for environmental monitoring and technological advancements. This research explores the integration of nano-materials in hydrogen sensing, leveraging advanced fabrication techniques to analyze the electrical characteristics of Al 0.43 Ga 0.57 As Cylindrical Surrounding Double-Gate (CSDG) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). The incorporation of nano-materials enhances sensitivity and selectivity, enabling hydrogen gas detection at extremely low concentrations. The sensor maintains a robust response even at elevated temperatures, such as 393 K. The results indicate peak frequencies of 57.36 GHz at 1.105 mA, 56.95 GHz at 1.161 mA, and 56.54 GHz at 1.222 mA for InGaAs (4.6 V), InGaAs (5.0 V), and AlGaAs (1.3 V) configurations, respectively. Thermodynamic analysis reveals hydrogen adsorption enthalpies of approximately − 0.58 and − 0.19 kJ/mol for DG and CSDG MOSFET devices. This interdisciplinary approach highlights the synergy between nano-material-based hydrogen sensing and fabrication technology, offering a transformative solution for hydrogen detection in industrial processes and emerging energy applications. Furthermore, the strategic implementation of fabrication techniques enhances the precision and reproducibility of sensor devices, ensuring consistent and reliable performance.