Fabrication and characterization of AlGaInN/GaInN/GaN <i>n</i>–<i>p</i>–<i>n</i> heterojunction bipolar transistors with a <i>p</i> <sup>+</sup>-GaN contact layer
Abstract In this study, we fabricated and characterized AlGaInN/GaInN/GaN n – p – n heterojunction bipolar transistors (HBTs) with a selectively regrown p + -GaN layer for the base/metal contact on a free-standing GaN substrate by metalorganic chemical vapor deposition. The use of the p + -GaN contact layer surely improved the base/metal electrical property and the base/emitter current injection, and thereby the fabricated HBTs exhibited good output DC characteristics. The maximum current density and the maximum current gain were estimated to be 2.0 A cm −2 and 64, respectively.
Authors
- Ryotaro Inoue (ORCID: https://orcid.org/0000-0001-5367-1236)
- Akira Mase (ORCID: https://orcid.org/0000-0002-2642-5889)
- Makoto Miyoshi (ORCID: https://orcid.org/0000-0001-9583-1891)
- Masaya Takimoto (ORCID: https://orcid.org/0009-0005-5035-7790)
- Takashi Egawa (ORCID: https://orcid.org/0000-0002-0335-0044)
- Tomoki Kojima
Institutions
- Nagoya Institute of Technology (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-06-24
- DOI
- https://doi.org/10.35848/1347-4065/ade7dd
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26