Vertical Schottky Barrier Diode with Multilevel Stepped Field Plates

This article proposes the design of a vertical Schottky barrier diode featuring a stepped field plate, based on the fourth‐generation ultrawide bandgap semiconductor material β ‐Ga 2 O 3 . The multilevel stepped field plate structure is utilized to reduce the peak electric field at the anode edge. By simulating the electric field distribution near the anode and comparing the magnitudes of the peak electric fields, the lengths, thicknesses, and number of layers of the field plates are optimized, leading to the development of an arc‐shaped field plate structure. This design significantly mitigates the electric field concentration effect at the anode edge, effectively increasing the breakdown voltage of the device while maintaining a forward conduction resistance comparable to that of an unfielded structure. The simulation results indicate that the arc‐shaped multilevel stepped field plate can substantially enhance the reverse breakdown voltage of the device, achieving a maximum reverse breakdown voltage of ≈5130 V, with a forward conduction resistance similar to that of a structure without a field plate, resulting in a power density of 4.1GW cm −2 .