Study and Fabrication of Ga2O3 Thin Films Using Thermal Evaporation

In this study, we deposited Ga 2 O 3 thin films on Si substrates by thermal evaporation and investigated the effects of surface morphology and electrical properties on various thermal treatments.Diffraction patterns indicated that the annealed films had a polycrystalline microstructure and that the grain size of Ga 2 O 3 thin films increased with annealing temperature.These results indicate that suitable processing parameters are beneficial in terms of improving the microstructure and electrical performance of Ga 2 O 3 thin films.The Ga 2 O 3 thin films are suitable for use as a thin-film transistor or sensor.