Investigation of thermoelectric parameters of p-type Bi2Te3 semiconductors in a temperature range 291-373K

Today's world has focused on investigating the thermoelectric properties of semiconductors related to problems such as direct conversion of heat energy to electrical energy and direct conversion of electrical energy to heat. In addition, the investigation of the thermoelectric properties of semiconductors is one of the basic researches of semiconductor physics and is important for the development of related sciences. Thermoelectric semiconductors are known to have the most usage area even now; It is thought that it can be used in different fields in the near future. Systems made of thermoelectric semiconductors are used in a wide area ranging from space technology to white goods technology. The research of these systems continues by deepening and expanding day by day. Because the basic information obtained here is transferred to the industry in a shorter time compared to other technologies and makes money. Therefore, most research has focused on the thermoelectric properties of semiconductors and thermoelectric technology. In the article, thermoelectric parameters of P- type Bi2Te3 semiconductors in the temperature range of 291-373K were investigated. The thermoemf, electrical conductivity, thermal conductivity, Z parameter behaviour at high temperatures of two types of P-type semiconductors obtained by two different methods were investigated and compared with the theoretical findings. In addition, using the variation of electrical conductivity with temperature, the band gap of the semiconductors was calculated separately and compared with the theory. It has been determined that the experimental results obtained are the same as the theoretical information within the error limits.