Large-Scale High-Power Single-Mode Vertical Cavity Surface Emitting Laser Arrays Defined by Proton Implantation

To improve the performance of the 850 nm Vertical Cavity Surface Emitting Laser (VCSEL), this paper presents a comprehensive study on the design, fabrication, and performance of large-scale high-power 850 nm VCSELs. A theoretical simulation was conducted to analyze far-field beam divergence and coupling effects for element spacings of $4 \mu \mathrm{~m}, 6 \mu \mathrm{~m}$, and $8 \mu \mathrm{~m}$. The simulation results were compared with experimental findings to evaluate device performance. GaAs/Al0.3Ga0.7As quantum well VCSEL epitaxial wafers were fabricated using metal-organic chemical vapor deposition (MOCVD). VCSEL arrays with 61 and 127 elements were manufactured, and their electro-optical characteristics, including threshold current, optical power, and far-field beam profiles, were assessed. The experimental results align closely with theoretical predictions, demonstrating that proton implantation enables the successful fabrication of large-scale, high-power, in-phase coupled VCSEL arrays with excellent beam quality, uniform near-field output, and strong coherent coupling. This work addresses critical challenges in VCSEL array design, including small array size, low in-phase power, and poor beam quality, and offers a viable solution for high-performance, large-scale VCSEL arrays.