Study the Impact of Work-Function Variation on Vertical Junctionless TFET Device

In this article, the effect of work function variations on the Vertical Junctionless TFET are analyzed utilizing the ATLAS TCAD simulator. We investigate the effect of gate material’s work function on different DC and analog parameters such as Energy band, Subthreshold Swing (SS), Electric Field, Nonlocal BBT Electron Tunneling Rate, ON-state current (ION), Surface Potential, Cut-off frequency (fT), OFF-state current (IOFF), and transconductance (gm). The proposed Si1-xGex heterostructure offers a clear benefit over the conventional silicon based TFET by optimizing tunneling current through band-gap engineering. Furthermore, we investigate the modulation of gate’s control over the channel by various gate materials with varying work functions, which impacts tunneling efficiency and overall device performance. Based on the performance metrics, we find that the proposed Vertical Junctionless TFET structure is one of the possible solution for low power applications.