Ultracompact 4H-silicon carbide optomechanical resonator with <i>f</i><sub><i>m</i></sub> · <i>Q</i><sub><i>m</i></sub> exceeding 10<sup>13</sup>  Hz

Silicon carbide (SiC) has great potential for optomechanical applications due to its outstanding optical and mechanical properties. However, challenges associated with SiC nanofabrication have constrained its adoption in optomechanical devices, as embodied by the considerable optical loss or lack of integrated optical access in existing mechanical resonators. In this work, we overcome such challenges and demonstrate a low-loss, ultracompact optomechanical resonator in an integrated 4H-SiC-on-insulator (4H-SiCOI) photonic platform for the first time, to our knowledge. Based on a suspended 4.3-μm-radius microdisk, the SiC optomechanical resonator features low optical loss (&lt;1 dB / cm ), a high mechanical frequency f m of 0.95×10 9 Hz , a mechanical quality factor Q m of 1.92×10 4 , and a footprint of &lt;1×10 −5 mm 2 . The corresponding f m · Q m product is estimated to be 1.82×10 13 Hz , which is among the highest reported values of optomechanical cavities tested in ambient environment at room temperature. In addition, the strong optomechanical coupling in the SiC microdisk enables coherent regenerative optomechanical oscillations at a threshold optical dropped power of 14 μW, which also supports efficient harmonic generation at increased power levels. With such competitive performance, we envision a range of chip-scale optomechanical applications to be enabled by the low-loss 4H-SiCOI platform.

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Publication Details

Journal
Photonics Research
Published
2025-06-24
DOI
https://doi.org/10.1364/prj.567674
Citations
1
Primary Topic
Mechanical and Optical Resonators
Type
article
Field-Weighted Citation Impact
1.25
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article

Ultracompact 4H-silicon carbide optomechanical resonator with fm · Qm exceeding 1013  Hz

Philip X.‐L. Feng, Qing Li, Yuncong Liu, A. Hamed et al.
1 citations
Photonics Research
Mechanical and Optical Resonators
1.25
article

Ultracompact 4H-silicon carbide optomechanical resonator with fm · Qm exceeding 1013  Hz

Philip X.‐L. Feng, Qing Li, Yuncong Liu, A. Hamed, Wenhan Sun
article en
1 citations

Abstract

Silicon carbide (SiC) has great potential for optomechanical applications due to its outstanding optical and mechanical properties. However, challenges associated with SiC nanofabrication have constrained its adoption in optomechanical devices, as embodied by the considerable optical loss or lack of integrated optical access in existing mechanical resonators. In this work, we overcome such challenges and demonstrate a low-loss, ultracompact optomechanical resonator in an integrated 4H-SiC-on-insulator (4H-SiCOI) photonic platform for the first time, to our knowledge. Based on a suspended 4.3-μm-radius microdisk, the SiC optomechanical resonator features low optical loss (&lt;1 dB / cm ), a high mechanical frequency f m of 0.95×10 9 Hz , a mechanical quality factor Q m of 1.92×10 4 , and a footprint of &lt;1×10 −5 mm 2 . The corresponding f m · Q m product is estimated to be 1.82×10 13 Hz , which is among the highest reported values of optomechanical cavities tested in ambient environment at room temperature. In addition, the strong optomechanical coupling in the SiC microdisk enables coherent regenerative optomechanical oscillations at a threshold optical dropped power of 14 μW, which also supports efficient harmonic generation at increased power levels. With such competitive performance, we envision a range of chip-scale optomechanical applications to be enabled by the low-loss 4H-SiCOI platform.

Photonics ResearchVol. 13(9)
Georgia Institute of Technology (US), University of Florida (US)
Affordable and clean energy
Openalex Percentile: Top 20%
Mechanical and Optical Resonators
1.25
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Ultracompact 4H-silicon carbide optomechanical resonator with <i>f</i><sub><i>m</i></sub> · <i>Q</i><sub><i>m</i></sub> exceeding 10<sup>13</sup>  Hz — Philip X.‐L. Feng, Qing Li, et al. · Photonics Research (2025) | TGRS Research Map | TGRS