Effect of Stoichiometry on the Structure and Polarization of BaTiO<sub>3</sub>

Abstract Barium titanate (BaTiO 3 ) is a material of interest for photonic device applications due to its strong optical non‐linearity. However, BaTiO 3 ‐based devices have not found widespread adoption, in part due to the challenges associated with synthesizing high quality thin‐films. Here, high‐resolution scanning transmission electron microscope (STEM) imaging is used to investigate the atomic structure of both on‐ and off‐stoichiometric BaTiO 3 synthesized by molecular beam epitaxy (MBE). This investigation reveals an asymmetry in the way the BaTiO 3 atomic lattice accommodates off‐stoichiometry growth and unveils features beyond what is expected from diffraction or surface characterization techniques. Excess titanium incorporates into the BaTiO 3 lattice to form pervasive defects despite titanium‐rich films having a low surface roughness and high‐quality appearance in diffraction. Excess barium forms a rough, water‐soluble surface layer but does not significantly impact the quality of the BaTiO 3 lattice. STEM is used to map titanium atom displacement in real‐space. The average displacement distance is 30–60 pm in the strained thin‐films, higher than the &lt;20 pm displacement in bulk BaTiO 3 . Additionally, the titanium atom displacement direction deviates from the c ‐axis of the unit cell, which may have implications for the material's electro‐optic tensor and thus for electro‐optic device design.

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Publication Details

Journal
Advanced Optical Materials
Published
2025-06-24
DOI
https://doi.org/10.1002/adom.202501037
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
0.00

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article

Effect of Stoichiometry on the Structure and Polarization of BaTiO3

Hao‐Yu Greg Lin, Julia A. Mundy, Larissa B. Little, Jules Gardener et al.
Advanced Optical Materials
Electronic and Structural Properties of Oxides
article

Effect of Stoichiometry on the Structure and Polarization of BaTiO3

Hao‐Yu Greg Lin, Julia A. Mundy, Larissa B. Little, Jules Gardener, David R. Barton, Alpha T. N’Diaye, Ashley Cavanagh, Charles M. Brooks, Robert M. Westervelt, Yang Zhang, Nicole K. Taylor, A. Butler, Ismail El Baggari
article en

Abstract

Abstract Barium titanate (BaTiO 3 ) is a material of interest for photonic device applications due to its strong optical non‐linearity. However, BaTiO 3 ‐based devices have not found widespread adoption, in part due to the challenges associated with synthesizing high quality thin‐films. Here, high‐resolution scanning transmission electron microscope (STEM) imaging is used to investigate the atomic structure of both on‐ and off‐stoichiometric BaTiO 3 synthesized by molecular beam epitaxy (MBE). This investigation reveals an asymmetry in the way the BaTiO 3 atomic lattice accommodates off‐stoichiometry growth and unveils features beyond what is expected from diffraction or surface characterization techniques. Excess titanium incorporates into the BaTiO 3 lattice to form pervasive defects despite titanium‐rich films having a low surface roughness and high‐quality appearance in diffraction. Excess barium forms a rough, water‐soluble surface layer but does not significantly impact the quality of the BaTiO 3 lattice. STEM is used to map titanium atom displacement in real‐space. The average displacement distance is 30–60 pm in the strained thin‐films, higher than the &lt;20 pm displacement in bulk BaTiO 3 . Additionally, the titanium atom displacement direction deviates from the c ‐axis of the unit cell, which may have implications for the material's electro‐optic tensor and thus for electro‐optic device design.

Advanced Optical MaterialsVol. 13(22)
Northwestern University (US), Harvard University (US), Lawrence Berkeley National Laboratory (US), Harvard University Press (US), NanoScale Corporation (United States) (US)
National Science Foundation, David and Lucile Packard Foundation, Ford Foundation, Alfred P. Sloan Foundation, Rowland Institute at Harvard, Advanced Light Source
Openalex Percentile: Top 90%
Electronic and Structural Properties of Oxides
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