Dislocation and Wet Etching of Lu<sub>2</sub>O<sub>3</sub>
On March 10, 2025, a team of experts led by Li Guoxin, Yin Yanru from the School of State Key Laboratory of Crystal Materials published an article in the 发光学报, introducing its research progress in the field of lutetium oxide crystal defects. Expert Li Guoxin established the optimal etching conditions for investigating dislocation defects in Lu2O3 crystals, which provides solutions to improve crystal quality.
Authors
- Shih-Yuan Wang (ORCID: https://orcid.org/0000-0002-1212-3484)
- Yanru Yin (ORCID: https://orcid.org/0000-0002-3937-0389)
- Lili Zhao (ORCID: https://orcid.org/0000-0002-0407-8193)
- Pei Wang (ORCID: https://orcid.org/0000-0002-0423-9639)
- Guoxin Li (ORCID: https://orcid.org/0000-0002-3810-0846)
- Wen-Lei Mu
Publication Details
- Journal
- Chinese Journal of Luminescence
- Published
- 2025-01-01
- DOI
- https://doi.org/10.37188/cjl.20250024
- Primary Topic
- Nuclear materials and radiation effects
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Key Research and Development Program of China