Synergistic Regulation of Luminescent and Ferroelectric Properties of Er<sup>3+</sup>-doped AlScN Films

Abstract lanthanide ions have abundant luminescent energy levels with their luminescence intensity and wavelength affected by the lattice symmetry.The regulation of luminescence properties via controllable lattice fields can be realized by altering electric fields and stress.Ferroelectric material has non-volatile spontaneous polarization and its direction can be reversed or reoriented by electric fields.Doping lanthanide ions as luminescence centers into ferroelectric materials and utilizing the ferroelectric polarization field for dynamic regulation of lanthanide ions' luminescence wavelength and intensity can significantly improve the performance of semiconductor optoelectronic devices.AlScN with its dynamically tunable high remanent polarization large bandgap and high compatibility with CMOS processes offers new opportunities for constructing novel luminescent devices with multifunctional ferroelectric regulation.This paper investigated the effects of Er 3+ doping concentrations on the luminescence and ferroelectric properties of AlScN films.The Er 3+ doping concentration rises and more luminescence centers are incorporated effectively enhancing the luminescence potential.Notably a marked increase in luminescence of Er 3+ -doped AlScN films was achieved at doping concentrations of 3. 6% to 9. 4%.However when the doping concentration exceeded 10% a