High-resolution and High-performance Quantum Dots Light-emitting Diode Based on Nanoimprint

Abstract The current high-resolution quantum dot light-emitting doides(QLEDs) fabricated by various quantum dots patterning techniques suffer from low efficiency mainly due to the passage of large leakage currents between pixels.To solve this issue a honeycomb Poly(methyl methacrylate) (PMMA) film was fabricated by nanoimprint technique and ap plied as a charge barrier layer in the QLED light emitting layer.The resulting red QLEDs with a resolution of 8 467 pixel per inch(PPI) were successfully fabricated.Due to the good insulating properties of PMMA the charge barrier layer suc cessfully isolates the electron transport layer and the hole transport layer.Therefore the leakage current of our device is greatly reduced compared to the device without charge barrier layer patterning and the external quantum efficiency (EQE) is greatly improved with a maximum EQE of 15. 31% and a maximum brightness of 100 274 cd/m 2 .Key words quantum dot light-emitting doides (QLEDs) nanoimprint high-resolution charge barrier layer